Experimental setup and first measurement of DNA damage induced along and around an antiproton beam

Radiotherapy employs ionizing radiation to induce lethal DNA lesions in cancer cells while minimizing damage to healthy tissues. Due to their pattern of energy deposition, better therapeutic outcomes can, in theory, be achieved with ions compared to photons. Antiprotons have been proposed to offer a further enhancement due to their annihilation at the end of the path. The work presented here aimed to establish and validate an experimental procedure for the quantification of plasmid and genomic DNA damage resulting from antiproton exposure. Immunocytochemistry was used to assess DNA damage in directly and indirectly exposed human fibroblasts irradiated in both plateau and Bragg peak regions of a 126 MeV antiproton beam at CERN. Cells were stained post irradiation with an anti-gamma-H2AX antibody. Quantification of the gamma-H2AX foci-dose relationship is consistent with a linear increase in the Bragg peak region. A qualitative analysis of the foci detected in the Bragg peak and plateau region indicates significant differences highlighting the different severity of DNA lesions produced along the particle path. Irradiation of desalted plasmid DNA with 5 Gy antiprotons at the Bragg peak resulted in a significant portion of linear plasmid in the resultant solution.

Non-Markovian qubit dynamics in a circuit-QED setup

We consider a circuit-QED setup that allows the induction and control of non-Markovian dynamics of a qubit. Non-Markovianity is enforced over the qubit by means of its direct coupling to a bosonic mode which is controllably coupled to another qubit-mode system. We show that this configuration can be achieved in a circuit-QED setup consisting of two initially independent superconducting circuits, each formed by one charge qubit and one transmission-line resonator, which are put in interaction by coupling the resonators to a current-biased Josephson junction. We solve this problem exactly and then proceed with a thorough investigation of the emergent non-Markovianity in the dynamics of the qubits. Our study might serve the context for the first experimental assessment of non-Markovianity in a multielement solid-state device.

A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup

The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the <110> crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics. Simulation results are compared with experimental data.